Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

被引：4

作者：

Chen, Yiren ^{[1
]}

Zhang, Zhiwei ^{[1
]}

Miao, Guoqing ^{[1
]}

Jiang, Hong ^{[1
]}

Song, Hang ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 02期

关键词：

avalanche photodiodes; back-illumination; epitaxial growth; selective area diffusion; semiconducting III-V materials; MULTIPLICATION LAYERS; INP; SUPPRESSION; PERFORMANCE;

D O I：

10.1002/pssa.202100577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, an alternative approach of selective-area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p-type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective-area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near-infrared back-illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high-performance planar InGaAs/InP APD focal plane arrays.

引用

页数：6

共 17 条

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