SCM study on the 2D diffusion behavior of p-type impurities in planar InGaAs detectors

被引：0

作者：

Zhang Shuai-Jun ^{[1
,2
]}

Li Tian-Xin ^{[2
]}

Wang Wen-Jing ^{[2
,3
]}

Li Ju-Zhu ^{[2
,3
]}

Shao Xiu-Mei ^{[4
]}

Li Xue ^{[4
]}

Zheng Shi-You ^{[1
]}

Pang Yue-Peng ^{[1
]}

Xia Hui ^{[2
]}

机构：

[1] Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, Shanghai 200093, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Shanghai Normal Univ, Math & Sci Coll, Shanghai 200234, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2022年 / 41卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Scanning Capacitance Microscopy (SCM); planar InGaAs detector; diffusion behavior; photocurrent response; PROFILE;

D O I：

10.11972/j.issn.1001-9014.2022.01.020

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Scanning Capacitance Microscopy (SCM) was applied to obtain the 2-dimensional carrier distribution on the cross-section of planar type InGaAs/InAlAs pixels. The profile of pn junction in the device structure was able to be depicted with high space resolution. Besides, for InGaAs/InP detector, the SCM study helps to disclose the distinct diffusion behavior of p-type impurities in different functional layers. The lateral diffusion speed of zinc in InGaAs absorption layer was decided as 3. 3 times than that in the depth direction, which is significantly higher than the lateral to depth ratio of 0. 67 in the n-InP cap layer, this could affect both the capacitance and dark current properties of the diode pixels.

引用

页码：262 / 268

页数：7

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