Optimization of the Electron Hole Bilayer Tunneling Field Effect Transistor

被引：0
|
作者：
Agarwal, Sapan [1 ]
Teherani, James T. [2 ]
Hoyt, Judy L. [2 ]
Antoniadis, Dimitri A. [2 ]
Yablonovitch, Eli [1 ]
机构：
[1] Univ Calif Berkeley, 550 Sutardja Dai Hall, Berkeley, CA 94720 USA
[2] MIT, Cambridge, MA 02139 USA
来源：
2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2013年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：109 / +
页数：2
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