Nanoscale investigation of side wall and surface domain structures in multilayer PbTiO3/PbZr0.3Ti0.7O3/PbTiO3 thin films

被引:2
|
作者
Wang, Longhai [1 ]
Dai, Ying [2 ]
Deng, Zhao [2 ]
机构
[1] Wuhan Inst Technol, Sch Elect & Informat Engn, Wuhan 430073, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
关键词
D O I
10.1088/0022-3727/41/13/135401
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanoscale domain structures of multilayer PbTiO3/PbZr0.3Ti0.7O3/PbTiO3 (PT/PZT/PT) thin films are investigated by three-dimensional piezoresponse force microscopy (PFM) in the side wall and on the bare surface. Topography images of the side wall show that the thin films have a compact columnar grain microstructure, and two or three grains stacked in the direction normal to the thin film plane can be observed clearly. The nanoscale three-dimensional piezoresponse images of the side wall and the surface exhibit a random distribution of the domains' orientation in the PT/PZT/PT thin films, but that all the grains in the side wall have a piezoresponse and the various changes in the magnitude of the piezoresponse obtained by the polarized voltage indicate that no a domains, amorphous or nonferroelectric structure can be detected on the thin films' surface. The fine and clear PFM images with various contrasts in the side wall exhibit that the stacked grains also have a random polarization direction. These stacked grains with a random polarization direction result in the reduction of the integral piezoresponse; therefore, various grey contrasts can be shown in the PFM images detected on the bare surface of the thin films.
引用
下载
收藏
页数:5
相关论文
共 50 条
  • [41] Pyroelectric characteristics of thin PbTiO3 and La-modified PbTiO3 films on platinum films for infrared sensors
    Deb, KK
    Tamagawa, T
    Di, Y
    Gui, G
    Halpern, BL
    Schmitt, JJ
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (02) : 89 - 93
  • [42] Pyroelectric characteristics of thin PbTiO3 and la-modified PbTiO3 films on platinum films for infrared sensors
    K. K. Deb
    T. Tamagawa
    Y. Di
    G. Gui
    B. L. Halpern
    J. J. Schmitt
    Journal of Electronic Materials, 2001, 30 : 89 - 93
  • [43] Correlation between switching and fatigue in PbZr0.3Ti0.7O3 thin films
    Grossmann, M
    Bolten, D
    Lohse, O
    Boettger, U
    Waser, R
    Tiedke, S
    APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1894 - 1896
  • [44] Improvement in electrical properties of PbZr0.4Ti0.6O3 thin films using PbTiO3 seeding layer
    Kim, CJ
    Lee, YK
    Lee, KM
    Chung, I
    PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 925 - 928
  • [45] Characterization of domain structures in epitaxial PbTiO3 thin films using synchrotron XRD
    Lee, KS
    Baik, S
    INTEGRATED FERROELECTRICS, 2001, 32 (1-4) : 835 - 842
  • [46] Effects of a PbTiO3 seed layer on the structural and the electrical properties of PbZr0.35Ti0.65O3 thin films
    Son, Young-Jin
    Kim, Yoon-Jung
    Lee, Baek-Hee
    Hwang, Sung-Yeon
    Park, Nam-Kyun
    Chang, Heon-Yong
    Hong, Suk-Kyoung
    Hong, Sung Joo
    Choi, Ji-Hye
    Kweon, Soon-Yong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (02) : 701 - 705
  • [47] Pb (Zr0.70.3 Ti0.7) O3 PbTiO3 multilayer thin films for pyroelectric infrared sensor application
    Sun, L.L.
    Tan, O.K.
    Zhu, W.G.
    Journal of Applied Physics, 2006, 99 (09):
  • [48] MICROSTRUCTURE AND DOMAIN CONFIGURATIONS IN FERROELECTRIC PBTIO3 AND PB(ZR,TI)O-3 THIN-FILMS
    ZHU, JG
    ALJASSIM, MM
    HUFFMAN, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (07) : 885 - 891
  • [49] Single domain single crystal ferroelectric PbTiO3 thin films
    Wasa, K
    Haneda, Y
    Sato, T
    Adachi, H
    Kanno, I
    Schlom, DG
    Trolier-McKinstry, S
    Gang, Q
    Eom, CB
    1998 IEEE ULTRASONICS SYMPOSIUM - PROCEEDINGS, VOLS 1 AND 2, 1998, : 619 - 623
  • [50] The effect of domain walls on leakage current in PbTiO3 thin films
    Jiang, X. W.
    Yang, Q.
    Cao, J. X.
    PHYSICS LETTERS A, 2016, 380 (9-10) : 1071 - 1074