Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

被引：35

作者：

Wang, M. ^{[1
]}

Andrews, C. ^{[1
]}

Reimers, S. ^{[1
,2
]}

Amin, O. J. ^{[1
]}

Wadley, P. ^{[1
]}

Campion, R. P. ^{[1
]}

Poole, S. F. ^{[1
]}

Felton, J. ^{[1
]}

Edmonds, K. W. ^{[1
]}

Gallagher, B. L. ^{[1
]}

Rushforth, A. W. ^{[1
]}

Makarovsky, O. ^{[1
]}

Gas, K. ^{[3
]}

Sawicki, M. ^{[3
]}

Kriegner, D. ^{[4
]}

Zubac, J. ^{[4
,5
]}

Olejnik, K. ^{[4
]}

Novak, V ^{[4
]}

Jungwirth, T. ^{[1
,4
]}

Shahrokhvand, M. ^{[6
]}

Zeitler, U. ^{[6
]}

Dhesi, S. S. ^{[2
]}

Maccherozzi, F. ^{[2
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Univ Pk, Nottingham NG7 2RD, England

[2] Diamond Light Source, Harwell Sci & Innovat Campus, Didcot OX11 0DE, Oxon, England

[3] Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

[4] Czech Acad Sci, Inst Phys, Cukrovarnicka 10, Prague 16200 6, Czech Republic

[5] Charles Univ Prague, Fac Math & Phys, Ke Karlovu 3, Prague 12116 2, Czech Republic

[6] Radboud Univ Nijmegen, High Field Magnet Lab HFML EMFL, Toernooiveld 7, NL-6525 ED Nijmegen, Netherlands

来源：

PHYSICAL REVIEW B | 2020年 / 101卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

MEMORY;

D O I：

10.1103/PhysRevB.101.094429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report magnetic-field-induced rotation of the antiferromagnetic Neel vector in epitaxial CuMnAs thin films. First, using soft x-ray magnetic linear dichroism spectroscopy as well as magnetometry, we demonstrate spin-flop switching and continuous spin reorientation in films with uniaxial and biaxial magnetic anisotropies, respectively, for applied magnetic fields of the order of 2 T. The remnant antiferromagnetic domain configurations are determined using x-ray photoemission electron microscopy. Next, we show that the Neel vector reorientations are manifested in the longitudinal and transverse anisotropic magnetoresistance. Dependencies of the electrical resistance on the orientation of the Neel vector with respect to both the electrical current direction and the crystal symmetry are identified, including a weak fourth-order term evident at high magnetic fields. The results provide characterization of key parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, and spin-flop field in epitaxial films of tetragonal CuMnAs, a candidate material for antiferromagnetic spintronics.

引用

页数：8

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