High cooling power density SiGe/Si micro-coolers

被引：47
|
作者：
Fan, X [1 ]
Zeng, G
Croke, E
LaBounty, C
Ahn, CC
Vashaee, D
Shakouri, A
Bowers, JE
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] LLC, HRL Labs, Malibu, CA 90265 USA
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 02期
关键词：
Cooling - Microelectronics - Optoelectronic devices - Semiconducting silicon - Semiconducting silicon compounds - Semiconductor superlattices - Temperature control;
D O I：
10.1049/el:20010096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiGe/Si superlattice micro-coolers are investigated experimentally. They can be monolithically integrated with Si-based microelectronic: devices to achieve localised cooling and temperature control. Cooling by as much as 4.2 K at 25 degreesC and 12K at 200 degreesC was measured on 3 mum thick, 60 x 60 mum(2) devices. This corresponds to maximum cooling power densities approaching kW/cm(2).
引用
收藏
页码：126 / 127
页数：2
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