Neutron induced damage in linear integrated circuits: Ionizing effects contribution.

被引：0
|
作者：
Azais, B [1 ]
Lopez, D [1 ]
Vie, M [1 ]
机构：
[1] DGA, DECE, Ctr Etudes Gramat, F-46500 Gramat, France
来源：
RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1998年
关键词：
D O I：
10.1109/RADECS.1997.698898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work deals with the impact of ionizing dose induced damage in linear junction isolated integrated circuits (JIICs) when exposed to neutron irradiations. A very low contribution of ionizing effects is shown for standard neutron test conditions.
引用
收藏
页码：234 / 239
页数：6
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