The premature breakdown in 6H-SiC p-n junction

被引：1
|
作者：
Sankin, V. I. [1 ]
Monakhov, A. M. [1 ]
Shkrebiy, P. P. [1 ]
机构：
[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
natural superlattice; miniband; Wannier-Stark localization; electrical field; streamer;
D O I：
10.4028/www.scientific.net/MSF.556-557.431
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the 6H-SiC p(+)-n(-)-n(+) junction the effect of the premature breakdown has been revealed. This effect stimulated by the small temperature increase and illumination by light with energy greater than the bandgap energy of 6H-SiC. The breakdown field appears to be 20% less than the intrinsic breakdown field in these structures.
引用
收藏
页码：431 / +
页数：2
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