The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

被引:0
|
作者
Wen, Guozhi [1 ]
Zeng, Xiangbin [2 ]
Li, Xianghu [1 ]
机构
[1] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
关键词
Quantum dots; synthesis; non-stoichiometric; silicon carbide; PECVD; CHEMICAL-VAPOR-DEPOSITION; NANOCRYSTALLINE SILICON; SUBSTRATE-TEMPERATURE; RAMAN-SPECTRA; SOLAR-CELLS; THIN-FILMS; PHOTOLUMINESCENCE; NANOSTRUCTURES; SPECTROSCOPY; POWDERS;
D O I
10.1007/s11664-016-4581-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC: H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900 degrees C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 x 10(12) cm(-2) and 3.2 x 10(12) cm(-2), and the crystalline volume fractions are about 58.3% and 61.3% for the 900 degrees C and 1050 degrees C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.
引用
收藏
页码:4432 / 4440
页数:9
相关论文
共 50 条
  • [41] PROPERTIES AND DEVICE APPLICATIONS OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS
    RAHMAN, MM
    YANG, CY
    SUGIARTO, D
    BYRNE, AS
    JU, M
    TRAN, K
    LUI, KH
    ASANO, T
    STICKLE, WF
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 7065 - 7070
  • [42] Electrical and structural properties of rapid thermal annealed amorphous silicon carbide films
    Choi, WK
    Ong, TY
    Han, LJ
    Loh, FC
    Tan, KL
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 169 (01): : 67 - 76
  • [43] Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films
    Hao, H. L.
    Wu, L. K.
    Shen, W. Z.
    APPLIED PHYSICS LETTERS, 2008, 92 (12)
  • [44] Structural and Optical Properties of Porous Thin Hydrogenated Amorphous Silicon Carbide Films for Optoelectronic Applications
    Boukezzata, A.
    Keffous, A.
    Kaci, S.
    Mahmoudi, B.
    Guerbous, L.
    Menari, H.
    Belkacem, Y.
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 14 (07) : 987 - 992
  • [45] Influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films
    Wang, Li
    Xu, Jun
    Ma, Tianfu
    Li, Wei
    Huang, Xinfan
    Chen, Kunji
    Journal of Alloys and Compounds, 1999, 290 : 273 - 278
  • [46] The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films
    Wang, L
    Xu, J
    Ma, TF
    Li, W
    Huang, XF
    Chen, KJ
    JOURNAL OF ALLOYS AND COMPOUNDS, 1999, 290 (1-2) : 273 - 278
  • [47] Si-rich a-Si1-xCx thin films by d.c. magnetron co-sputtering of silicon and silicon carbide: Structural and optical properties
    Ouadfel, M. A.
    Keffous, A.
    Brighet, A.
    Gabouze, N.
    Hadjersi, T.
    Cheriet, A.
    Kechouane, M.
    Boukezzata, A.
    Boukennous, Y.
    Belkacem, Y.
    Menari, H.
    APPLIED SURFACE SCIENCE, 2013, 265 : 94 - 100
  • [48] Effect of chemical annealing on the optical properties of hydrogenated amorphous silicon films
    El-Naggar, A. M.
    Al-Dhafiri, A. M.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 829 - 832
  • [49] Optical and Structural Features of Silicon-Rich Hydrogenated Amorphous Silicon Nitride Thin Films
    Singh, Sarab Preet
    Oton, Claudio J.
    Srivastava, P.
    Ghosh, Santanu
    Prakash, G. Vijaya
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (12) : 10733 - 10736
  • [50] Preparation and photoluminescent properties of Si-rich silicon nitride thin films
    College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China
    不详
    Bandaoti Guangdian, 2007, 2 (209-212): : 209 - 212