Crystallization kinetics of Ge20Te80 chalcogenide glasses doped with Sb

被引:17
|
作者
Ziani, N [1 ]
Belhadji, M
Heireche, L
Bouchaour, Z
Belbachir, M
机构
[1] Univ Sci & Technol Oran, Fac Sci, Dept Phys, Oran, Algeria
[2] Univ Essenia Oran, Fac Sci, Oran, Algeria
关键词
chalcogenid; GeTeSb; DSC; Matusita's model; avrami exponent; crystallization kinetics;
D O I
10.1016/j.physb.2004.12.068
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A study of kinetics of non-isothermal crystallization process for Ge20-x Te80Sbx (x = 0, 3,4, 5) system was reported and interpreted in this work by using Matusita's model. From the differential scanning calorimetry (DSC) traces obtained under dynamic conditions, the activation energy of growth process and values of n and m which are numerical factors depending on crystallization mechanisms are evaluated. The validity of Matusita's model was ascertained by comparison with the results obtained by application of two well-known methods which are Ozawa and Kissinger ones. (c) 2005 Elsevier B.V. All rights reserved.
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页码:132 / 137
页数:6
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