Films Based on the Phases in the Si-C-N System: Part 1. Synthesis and Characterization of Bis(trimethylsilyl)ethylamine as a Precursor

被引：5

作者：

Sysoev, S. V. ^{[1
]}

Kolontaeva, A. O. ^{[1
]}

Nikulina, L. D. ^{[1
]}

Kosinova, M. L. ^{[1
]}

Kuznetsov, F. A. ^{[2
]}

Rakhlin, V. I. ^{[2
]}

Lis, A. V. ^{[2
]}

Voronkov, M. G. ^{[2
,3
]}

机构：

[1] Russian Acad Sci, Nikolaev Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia

[2] Russian Acad Sci, Favorsky Irkutsk Inst Chem, Siberian Branch, Irkutsk 664033, Russia

[3] Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199034, Russia

来源：

GLASS PHYSICS AND CHEMISTRY | 2012年 / 38卷 / 01期

关键词：

bis(trimethylsilyl)ethylamine; silicon carbonitride; simulation of CVD process; SILICON CARBONITRIDE FILMS; CHEMICAL-VAPOR-DEPOSITION; MICROWAVE PLASMA CVD; SINGLE-SOURCE PRECURSOR; NITRIDE FILMS; (DIMETHYLAMINO)DIMETHYLSILANE PRECURSOR; TETRAMETHYLDISILAZANE SOURCE; STRUCTURAL DEPENDENCIES; ORGANOSILICON PRECURSOR; COUPLED PLASMAS;

D O I：

10.1134/S1087659612010129

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The characterization of bis(trimethylsilyl)ethylamine was carried out using a combination of IR, UV, H-1, C-13, Si-29, and N-15 NMR spectroscopy, as well as elemental analysis. The spectral characteristics of the compound were determined. The temperature dependence of the saturated vapor pressure was established by tensimetric studies, and the thermodynamic characteristics of vaporization were calculated. Thermodynamic simulation of the chemical vapor deposition was performed and was used as a basis for predicting the composition of the deposited phase complexes depending on the type of reagent and the process conditions.

引用

页码：8 / 14

页数：7

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