Determination of tolerance limits for the reliability of semiconductor devices using longitudinal data

被引:4
|
作者
Hofer, Vera [1 ]
Leitner, Johannes [1 ]
Lewitschnig, Horst [2 ]
Nowak, Thomas [1 ]
机构
[1] Karl Franzens Univ Graz, Inst Stat & Operat Res, Univ Str 15-E3, A-8010 Graz, Austria
[2] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria
关键词
multivariate probability; reliability engineering; semiconductor device reliability;
D O I
10.1002/qre.2226
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Design and production of semiconductor devices for the automotive industry are characterized by high reliability requirements, such that the proper functioning of these devices is ensured over the whole specified lifetime. Therefore, manufacturers let their products undergo extensive testing procedures that simulate the tough requirements their products have to withstand. Such tests typically are highly accelerated, to test the behavior of the products over the whole lifetime. In case of drift of electrical parameters, manufacturers then need to find appropriate tolerance limits for their final electrical product tests, such that the proper functioning of their devices over the whole specified lifetime is ensured. In this study, we present a statistical model for the determination of tolerance limits that minimize yield loss. The model considers longitudinal measurements of continuous features, based on censored data from stress tests. The tolerance limits are derived from multivariate distributions where the dependence structure is described by different copulas. Based on extensive numerical testing, we are able to provide insights into the properties of our model for different drift behaviors of the devices.
引用
收藏
页码:2673 / 2683
页数:11
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