Synthesis and structural properties of GaN particles from GaO2H powders

被引：32
|
作者：
Xiao, HD
Ma, HL [1 ]
Xue, CS
Hu, WR
Ma, J
Zong, FJ
Zhang, XJ
Ji, F
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2005年 / 14卷 / 10期
关键词：
GaO2H; beta-Ga2O3; synthesis; nitridation temperature; GaN;
D O I：
10.1016/j.diamond.2005.06.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gallium nitride(GaN) powders have been synthesized by nitriding gallium oxyhydroxide (GaO2H) powders in the flow of NH3 gas at a nitridation temperature of 950 degrees C for 35 min. X-ray powder diffraction (XRD) patterns and Fourier transform infrared (FTIR) spectra reveal that simple heat treatment of GaO2H in the flow of NH3 leads to the formation of hexagonl GaN with lattice constants a =3.191 angstrom, and c =5.192 angstrom at 950 degrees C through intermediate conversion of beta-Ga2O3. X-ray photo-electron spectroscopy (XPS) confirms the formation of bonding between Ga and N, and yields that the surface stoichiometry of Ga: N approximates 1: 1, Transmission electron microscopy (TEM) image indicates that GaN particle is a single crystal, and its morphology is ruleless. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：1730 / 1734
页数：5
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