Ab initio molecular dynamics simulation of laser melting of silicon

被引:198
|
作者
Silvestrelli, PL
Alavi, A
Parrinello, M
Frenkel, D
机构
[1] QUEENS UNIV BELFAST,SCH MATH & PHYS,ATOMIST SIMULAT GRP,BELFAST BT7 1NN,ANTRIM,NORTH IRELAND
[2] FOM,INST ATOM & MOL PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
关键词
D O I
10.1103/PhysRevLett.77.3149
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The method of nb initio molecular dynamics, based on finite temperature density functional theory, is used to simulate laser heating of crystal silicon. We have found that a high concentration of excited electrons dramatically weakens the covalent bond. As a result, the system undergoes a melting transition to a metallic state. In contrast to ordinary liquid silicon, the new liquid is characterized by a high coordination number and a strong reduction of covalent bonding effects.
引用
收藏
页码:3149 / 3152
页数:4
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