Dynamics of liquid and undercooled silicon: An ab initio molecular dynamics study

被引:27
|
作者
Jakse, N. [1 ]
Pasturel, A. [1 ,2 ]
机构
[1] INP Grenoble, UJF CNRS 1130, F-38402 St Martin Dheres, France
[2] CNRS, Lab Phys & Modelisat Milieux Condenses, F-38042 Grenoble 09, France
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 14期
关键词
ab initio calculations; diffusion; elastic waves; elemental semiconductors; liquid structure; liquid theory; liquid-liquid transformations; melting point; molecular dynamics method; silicon; undercooling; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; SUPERCOOLED LIQUID; THERMOPHYSICAL PROPERTIES; SI; SEMICONDUCTORS; METALS; PSEUDOPOTENTIALS; TRANSITION; DIFFUSION;
D O I
10.1103/PhysRevB.79.144206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles molecular dynamics simulations of liquid and undercooled silicon have been performed in order to study the evolution of dynamic properties across the melting point. The calculated dynamic structure factors show collective excitations at small wave vectors above the melting point, in good agreement with recent experimental data, while the transverse current correlation functions do not display propagating shear modes. Upon undercooling, our results evidence the occurrence of well-defined shear modes that result from an enhancement of local tetrahedral arrangement associated to strong covalent bonding suggesting that propagating shear waves might be sustained by a concerted motion of tetrahedra.
引用
收藏
页数:6
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