Chalcogenide materials and their application to Non-Volatile Memories

被引：53

作者：

Sousa, Veronique ^{[1
]}

机构：

[1] CEA, LETI, MINATEC, F-38054 Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 05期

关键词：

Chalcogenide materials; Phase change; Ionic conduction; Non-Volatile Memories; PHASE; AG; CRYSTALLIZATION; CONDUCTIVITY; GE2SB2TE5; BEHAVIOR; FILMS; TE; SB;

D O I：

10.1016/j.mee.2010.06.042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chalcogenide materials are chemical compounds consisting of at least one chalcogen ion, i.e. a chemical element in column VI of the periodic table also known as the oxygen family. More precisely the term chalcogenide refers to the sulphides, selenides, and tellurides. Among the various applications of this class of materials, we review here two types of Non-Volatile Memories (NVM): the Phase Change Memories (PCM) which rely on the rapid crystallisation and high electrical contrast between the amorphous and crystalline phases of some of these compounds, and the Current Bridging Random Access Memories (CBRAM) which make use of the ionic conduction of compounds containing metallic ions. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：807 / 813

页数：7

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