Transient behavior of photoconductivity in Ge-Si single crystals

被引：0
|
作者：
Bakirov, MY [1 ]
Shakhbazova, RV [1 ]
机构：
[1] Azerbaijan Acad Sci, Abdullaev Inst Phys, Dept Radiat Res, Baku 370143, Azerbaijan
来源：
INORGANIC MATERIALS | 2001年 / 37卷 / 02期
关键词：
Silicon; Inorganic Chemistry; Recombination; Solid Solution; Transient Behavior;
D O I：
10.1023/A:1004180804709
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The transient behavior of photoconductivity in single crystals of Ge-Si solid solutions was studied. The parameters of sticking and recombination centers were determined. The results suggest that impurity agglomerates and silicon precipitates act as recombination and sticking centers, respectively.
引用
收藏
页码：99 / 101
页数：3
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