共 50 条
- [1] KINETICS OF PHOTOCONDUCTIVITY IN SINGLE-CRYSTALS OF GE-SI SOLID-SOLUTIONS [J]. IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1981, (02): : 78 - 81
- [2] PHOTOCONDUCTIVITY OF SINGLE-CRYSTALS OF MANGANESE-DOPED GE-SI SOLID-SOLUTIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (02): : 198 - 200
- [3] PIEZORESISTANCE OF GE-SI SOLID-SOLUTIONS [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1987, 32 (01): : 93 - 95
- [5] Local inhomogeneities in single crystals of Ge-Si solid solutions [J]. INORGANIC MATERIALS, 1996, 32 (05): : 467 - 469
- [6] EFFECT OF COMPOSITION FLUCTUATIONS IN GE-SI SOLID-SOLUTIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 149 - 152
- [7] ANNEALING OF RADIATION DEFECTS IN GE-SI SOLID-SOLUTIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1230 - 1231
- [8] ELECTRON-STRUCTURE OF SOLID-SOLUTIONS GE-SI [J]. INORGANIC MATERIALS, 1976, 12 (10): : 1419 - 1424
- [9] ENERGY-SPECTRUM OF SB IN SOLID-SOLUTIONS GE-SI [J]. INORGANIC MATERIALS, 1978, 14 (11): : 1651 - 1653
- [10] SOLID-SOLUTIONS OF THE SYSTEM GE-SI NEAR PURE GERMANIUM [J]. INORGANIC MATERIALS, 1987, 23 (12): : 1708 - 1710