Barrier thickness dependence of optical properties in GaAs coupled quantum wires

被引：2
|
作者：
Komori, K
Sasaki, F
Wang, XL
Ogura, M
Matsuhata, H
机构：
[1] Agcy Ind Sci & Technol, Electrotech Lab, Tsukuba, Ibaraki 305, Japan
[2] Japan Sci & Technol Corp, Kawaguchi, Saitama 332, Japan
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期
关键词：
D O I：
10.1016/S0038-1101(98)00006-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Barrier thickness dependences, namely coupling strength dependences, of optical properties in GaAs coupled quantum wires are investigated by the photoluminescence (PL), photoluminescence excitation (PLE) and radiative lifetime measurements. In the photoluminescence characteristics, the coupled states of symmetric and antisymmetric states are clearly observed with large barrier thickness dependence. Also, the temperature dependence of the radiative lifetime shows a barrier thickness dependence which might be due to the difference of the oscillator strength in the coupled quantum wires with different barrier thicknesses. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1211 / 1216
页数：6
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