A Voltage-Controlled Magnetic Anisotropy based True Random Number Generator

被引：1
|
作者：
Quizon, Lawrence Roman A. [1 ]
Alvarez, Anastacia B. [1 ]
Santos, Christoper G. [1 ]
Rosales, Marc D. [1 ]
Hizon, John Richard E. [1 ]
Sabino, Maria Patricia Rouelli G. [1 ]
机构：
[1] Univ Philippines Diliman, Elect & Elect Engn Inst, Quezon City, Philippines
来源：
18TH INTERNATIONAL SOC DESIGN CONFERENCE 2021 (ISOCC 2021) | 2021年
关键词：
true random number generation; magnetic tunnel junction; voltage controlled magnetic anisotropy; SPIN-TRANSFER-TORQUE;
D O I：
10.1109/ISOCC53507.2021.9613854
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
An emerging nanodevice called voltage controlled magnetic anisotropy magnetic tunnel junction (VCMA-MTJ) exhibits stochastic behavior that can be taken advantage of to produce random numbers at low power, low area, and high speed. In this paper, a 40MHz 104fJ/bit true random number generator (tRNG) was designed that works by applying 1V pulses to the VCMA-MTJ and then reading the resultant state, achieving 6800x the throughput of the most energy-efficient MTJ-based tRNG module designed for security while only consuming 5.21x more energy per bit. However, VCMA-MTJ based tRNG was also found to be very sensitive to variations in free-layer thickness, which can be solved by trading off an 8x increase in area and energy consumption.
引用
收藏
页码：159 / 160
页数：2
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