A Voltage-Controlled Magnetic Anisotropy based True Random Number Generator

被引：1
|
作者：
Quizon, Lawrence Roman A. [1 ]
Alvarez, Anastacia B. [1 ]
Santos, Christoper G. [1 ]
Rosales, Marc D. [1 ]
Hizon, John Richard E. [1 ]
Sabino, Maria Patricia Rouelli G. [1 ]
机构：
[1] Univ Philippines Diliman, Elect & Elect Engn Inst, Quezon City, Philippines
来源：
18TH INTERNATIONAL SOC DESIGN CONFERENCE 2021 (ISOCC 2021) | 2021年
关键词：
true random number generation; magnetic tunnel junction; voltage controlled magnetic anisotropy; SPIN-TRANSFER-TORQUE;
D O I：
10.1109/ISOCC53507.2021.9613854
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
An emerging nanodevice called voltage controlled magnetic anisotropy magnetic tunnel junction (VCMA-MTJ) exhibits stochastic behavior that can be taken advantage of to produce random numbers at low power, low area, and high speed. In this paper, a 40MHz 104fJ/bit true random number generator (tRNG) was designed that works by applying 1V pulses to the VCMA-MTJ and then reading the resultant state, achieving 6800x the throughput of the most energy-efficient MTJ-based tRNG module designed for security while only consuming 5.21x more energy per bit. However, VCMA-MTJ based tRNG was also found to be very sensitive to variations in free-layer thickness, which can be solved by trading off an 8x increase in area and energy consumption.
引用
收藏
页码：159 / 160
页数：2
相关论文
共 50 条
  • [1] A Calibration-Free In-Memory True Random Number Generator Using Voltage-Controlled MRAM
    Yang, Jiyue
    Wu, Di
    Lee, Albert
    Razavi, Seyed Armin
    Gupta, Puneet
    Wang, Kang L.
    Pamarti, Sudhakar
    [J]. IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021), 2021, : 115 - 118
  • [2] Calibration-Free In-Memory True Random Number Generator Using Voltage-Controlled MRAM
    Yang, Jiyue
    Wu, Di
    Lee, Albert
    Razavi, Seyed Armin
    Gupta, Puneet
    Wang, Kang L.
    Pamarti, Sudhakar
    [J]. ESSCIRC 2021 - IEEE 47TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2021, : 115 - 118
  • [3] A CMOS Random Number Generator with Noise-Coupled Voltage-Controlled Oscillators
    Au-Yeung, Chung Fai
    Li, Yiu Kei
    [J]. 2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2019,
  • [4] Towards magnonic devices based on voltage-controlled magnetic anisotropy
    Rana, Bivas
    Otani, YoshiChika
    [J]. COMMUNICATIONS PHYSICS, 2019, 2 (1)
  • [5] Voltage-controlled magnetic anisotropy based physical unclonable function
    Meo, Andrea
    Garzon, Esteban
    De Rose, Raffaele
    Finocchio, Giovanni
    Lanuzza, Marco
    Carpentieri, Mario
    [J]. APPLIED PHYSICS LETTERS, 2023, 123 (06)
  • [6] Towards magnonic devices based on voltage-controlled magnetic anisotropy
    Bivas Rana
    YoshiChika Otani
    [J]. Communications Physics, 2
  • [7] Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction
    Lee, Hochul
    Ebrahimi, Farbod
    Amiri, Pedram Khalili
    Wang, Kang L.
    [J]. AIP ADVANCES, 2017, 7 (05)
  • [8] Review of voltage-controlled magnetic anisotropy and magnetic insulator
    Dai, Bingqian
    Jackson, Malcolm
    Cheng, Yang
    He, Haoran
    Shu, Qingyuan
    Huang, Hanshen
    Tai, Lixuan
    Wang, Kang
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2022, 563
  • [9] Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy
    Yang, Seungmo
    Son, Jong Wan
    Ju, Tae-Seong
    Tran, Duc Minh
    Han, Hee-Sung
    Park, Sungkyun
    Park, Bae Ho
    Moon, Kyoung-Woong
    Hwang, Chanyong
    [J]. ADVANCED MATERIALS, 2023, 35 (09)
  • [10] Voltage-controlled magnetic anisotropy in MgO/PtMnAs heterostructures
    Yue Hu
    Shiming Yan
    Shiran Gao
    Chengyang Zhao
    Wen Qiao
    Ru Bai
    Tiejun Zhou
    [J]. Applied Physics A, 2023, 129
12345