共 50 条
- [41] Semipolar (10(1)over-bar(1)over-bar) InGaN/GaN laser diodes on bulk GaN substrates [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (17-19): : L444 - L445
- [42] InGaN/GaN laser diodes on semipolar (10(1)over-bar(1)over-bar) bulk GaN substrates [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2108 - +
- [44] Control of impurity concentration in N-polar (000(1)over-bar) GaN grown by metalorganic vapor phase epitaxy [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (08):
- [45] Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template [J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2549 - 2552