Electrical conduction mechanism and photon-generated carrier recombination process in amorphous InSb films

被引:5
|
作者
Yao, Yanping [1 ]
Liu, Chunling [1 ]
Qi, Haidong [1 ]
Chang, Xi [1 ]
Wang, Chunwu [1 ]
Wang, Guangde [1 ]
机构
[1] Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China
关键词
Amorphous InSb; Thin films; Conduction mechanism; Photoconductivity; THIN-FILMS; PHOTOCONDUCTIVITY; INAS;
D O I
10.1016/j.cap.2010.10.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Temperature dependence of dark conductivity and photoconductivity has been studied in amorphous InSb thin films in the temperature range of 120-300 K. The experimental data suggest that conduction in the high temperature range occurs in the extended states; conduction in the intermediate temperature range is due to thermally assisted tunneling of charge carriers in localized states near the band edge; while conduction in low temperature range takes place through variable range hopping of charge carriers in the localized states near the Fermi level. The temperature dependence of photoconductivity shows that the temperature region is divided into two regions. Moreover the result of intensity dependence of steady state photoconductivity indicates that bimolecular recombination at high temperatures and monomolecular at low temperatures in amorphous InSb thin films. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:620 / 623
页数:4
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