Electrical conduction mechanism in amorphous Se80In20-xPbx films

被引：0
|
作者：
Khan, MAM [1 ]
Zulfequar, M [1 ]
Husain, M [1 ]
机构：
[1] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
来源：
CURRENT APPLIED PHYSICS | 2002年 / 2卷 / 05期
关键词：
density of states; DC conductivity; amorphous semiconductor; thin films;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
DC conductivity measurements on thin films of a-Se80In20-xPbx (where x = 0, 2, 6 and 10) are reported in the temperature range 200-400 K. The density of states near the Fermi level is calculated using the DC conductivity (Mott parameters). The conduction in the low-temperature region is found to be due to variable range hopping while that in the high-temperature region is due to thermally assisted tunneling of the carriers in the localized states near the band edge. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：401 / 406
页数：6
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