High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

被引：7
|
作者：
Pan, TM [1 ]
Lei, TF
Yang, WL
Cheng, CM
Chao, TS
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
[4] Natl Tsing Hua Univ, Natl Nano Device Labs, Hsinchu, Taiwan
[5] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 02期
关键词：
N2O; NH3; nitridation; oddation; oxynitride; RTA;
D O I：
10.1109/55.902834
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
引用
收藏
页码：68 / 70
页数：3
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