A new method for the analysis of high-resolution SILC data

被引：1
|
作者：
Aresu, S
De Ceuninck, W
Knuyt, G
Mertens, J
Manca, J
De Schepper, L
Degraeve, R
Kaczer, B
D'Olieslaeger, M
D'Haen, J
机构：
[1] IMOMEC, IMEC Div, B-3590 Diepenbeek, Belgium
[2] IMEC, B-3001 Heverlee, Belgium
[3] Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium
来源：
MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 9-11期
关键词：
D O I：
10.1016/S0026-2714(03)00263-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stress-induced Leakage Current (SILC) on ultra-thin SiO2 was measured in-situ by using a high-resolution measurement technique. A broad gate stress voltage range was applied from -2.9 V down to -1.9 V with a voltage step of 0.2 V. The observed current increase corresponds both to an increase in positive charge trapping and to the growth of conduction paths through the oxide. In this article, a new method, based on the Nigam-model is proposed to determine the relevant model parameters. It has been observed that at low voltages the contribution of the charge-trapping component is drastically reduced. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1483 / 1488
页数：6
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