Negative differential capacitance in n-GaN/p-Si heterojunctions

被引：14
|
作者：
Kumar, Mahesh [1 ,2 ]
Bhat, Thirumaleshwara N. [1 ]
Rajpalke, Mohana K. [1 ]
Roul, Basanta [1 ,2 ]
Sinha, Neeraj [3 ]
Kalghatgi, A. T. [2 ]
Krupanidhi, S. B. [1 ]
机构：
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India
[3] Govt India, Off Principal Sci Advisor, New Delhi 110011, India
来源：
SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 05期
关键词：
GaN; MBE; Negative differential capacitance; Heterojunctions; LIGHT-EMITTING-DIODES; HETEROSTRUCTURES; MOBILITY;
D O I：
10.1016/j.ssc.2010.12.023
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE). The NDC is observed at low frequencies 1 and 10 kilohertz (kHz) and disappeared at a higher testing frequency of 100 kHz. The NDC is also studied with temperature and found that it has disappeared above 323 degrees C. Current-Voltage (I-V) characteristics of n-GaN /p-Si heterojunction were measured at different temperatures and are attributed to the space-charge-limited current (SCLC). A simple model involving two quantum states is proposed to explain the observed NDC behavior. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：356 / 359
页数：4
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