Effects of first rapid thermal annealing temperature on Co silicide formation

被引：5
|
作者：
Peng, HJ
Shen, ZX
Lim, EH
Lai, CW
Liu, R
Wee, ATS
Sameer, A
Dai, JY
Zhang, BC
Zheng, JZ
机构：
[1] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 08期
关键词：
D O I：
10.1016/S0038-1101(03)00008-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and COSi2 film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother COSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother COSi2/Si interface at higher RTA1 temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1249 / 1253
页数：5
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