Phonon properties of β-FeSi2 and photoluminescence

被引：3
|
作者：
Maeda, Y. [1 ]
Nakajima, T. [1 ]
Matsukura, B. [1 ]
Ikeda, T. [1 ]
Hiraiwa, Y. [1 ]
机构：
[1] Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, Japan
来源：
ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010) | 2011年 / 11卷
关键词：
IR absorption; beta-FeSi2; photoluminescence; phonon; RAMAN-SPECTRA;
D O I：
10.1016/j.phpro.2011.01.007
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have investigated phonon properties of some beta-FeSi2 crystals with characteristic light emission properties by using measurements of far-infrared absorption and photoluminescence in order to discuss a correlation between them. It has been found that there is a systematic correlation between phonon states and light emission efficiency and that the phonons above the energy of more than similar to 44 meV may be effectively coupled to the optical indirect transition for the IR light emission from beta-FeSi2 crystals. (C) 2010 Published by Elsevier B.V.
引用
收藏
页码：167 / 170
页数：4
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