Phonon properties of β-FeSi2 and photoluminescence

被引：3
|
作者：
Maeda, Y. [1 ]
Nakajima, T. [1 ]
Matsukura, B. [1 ]
Ikeda, T. [1 ]
Hiraiwa, Y. [1 ]
机构：
[1] Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, Japan
来源：
ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010) | 2011年 / 11卷
关键词：
IR absorption; beta-FeSi2; photoluminescence; phonon; RAMAN-SPECTRA;
D O I：
10.1016/j.phpro.2011.01.007
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have investigated phonon properties of some beta-FeSi2 crystals with characteristic light emission properties by using measurements of far-infrared absorption and photoluminescence in order to discuss a correlation between them. It has been found that there is a systematic correlation between phonon states and light emission efficiency and that the phonons above the energy of more than similar to 44 meV may be effectively coupled to the optical indirect transition for the IR light emission from beta-FeSi2 crystals. (C) 2010 Published by Elsevier B.V.
引用
收藏
页码：167 / 170
页数：4
相关论文
共 50 条
  • [1] Photoluminescence properties of ion beam synthesized β-FeSi2
    Maeda, Y
    Terai, Y
    Itakura, M
    Kuwano, N
    THIN SOLID FILMS, 2004, 461 (01) : 160 - 164
  • [2] Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals
    1600, Elsevier Science S.A., Lausanne, Switzerland (219): : 1 - 2
  • [3] Photoluminescence properties of carbon-doped β-FeSi2 nanocrystals
    Maeda, Yoshihito
    Nishimura, Kentaro
    Nakajima, Takahito
    Matsukura, Bui
    Narumi, Kazumasa
    Sakai, Seiji
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, 2012, 9 (10-11): : 1884 - 1887
  • [4] Photoluminescence properties of Si/β-FeSi2/Si double heterostructure
    Akiyama, Kensuke
    Kaneko, Satoru
    Hirabayashi, Yasuo
    Funakubo, Hiroshi
    THIN SOLID FILMS, 2006, 508 (1-2) : 380 - 384
  • [5] Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer
    Akiyama, K.
    Kaneko, S.
    Hirabayashi, Y.
    Yokomizo, K.
    Itakura, M.
    IOP Conference Series: Materials Science and Engineering, 2011, 18 (SYMPOSIUM 5):
  • [6] Porous silicon based β-FeSi2 and photoluminescence
    Chen, H. T.
    Wu, X. L.
    Zhang, Y. Y.
    Su, W. N.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 97 (03): : 725 - 728
  • [7] Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer
    Akiyama, K.
    Kaneko, S.
    Hirabayashi, Y.
    Yokomizo, K.
    Itakura, M.
    3RD INTERNATIONAL CONGRESS ON CERAMICS (ICC3): HYBRID AND NANO-STRUCTURED MATERIALS, 2011, 18
  • [8] Photoluminescence properties of polycrystalline β-FeSi2 grown by RF magnetron sputtering
    Terai, Yoshikazu
    Nishi, Hiroki
    Oka, Naohiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59
  • [9] Photoluminescence enhancement in impurity doped β-FeSi2
    Terai, Y
    Maeda, Y
    OPTICAL MATERIALS, 2005, 27 (05) : 925 - 928
  • [10] Porous silicon based β-FeSi2 and photoluminescence
    H. T. Chen
    X. L. Wu
    Y. Y. Zhang
    W. N. Su
    Applied Physics A, 2009, 97 : 725 - 728
12345