Dislocation loops in silicon-germanium alloys: The source of interstitials

被引：5
|
作者：
Crosby, RT [1 ]
Jones, KS
Law, ME
Radic, L
Thompson, PE
Liu, J
机构：
[1] Univ Florida, SWAMP Ctr, Gainesville, FL 32611 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] Varian Semicond Equipment Associates, Gloucester, MA 01930 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期
关键词：
D O I：
10.1063/1.2123389
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The relationships between extended defect evolution and boron diffusion in Si0.77Ge0.23 have been investigated. A SiGe structure was grown by molecular beam epitaxy with a 3x10(18) atoms/cm(3) boron marker layer positioned 0.50 mu m below the surface. Samples were ion implanted with 60 keV Si+ at a dose of 1x10(14) atoms/cm(2) and subsequently annealed at 750 degrees C for various times. The evolution of extended defects in the near surface region was monitored with plan-view transmission electron microscopy. Secondary ion mass spectroscopy concentration profiles facilitated the characterization of boron diffusion. Boron experiences transient enhanced diffusion regulated by the dissolution of dislocation loops. The maximum diffusion enhancement in Si0.77Ge0.23 is less than that observed in pure Si. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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