Effect of heat treatment on microstructural and optical properties of CBD grown Al-doped ZnO thin films

被引:61
|
作者
Chandramohan, R. [1 ]
Vijayan, T. A. [1 ]
Arumugam, S. [2 ]
Ramalingam, H. B. [2 ]
Dhanasekaran, V. [3 ]
Sundaram, K. [3 ]
Mahalingam, T. [3 ]
机构
[1] Sree Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, India
[2] Govt Arts Coll, Dept Phys, Udumalpet 642126, India
[3] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
关键词
Al-doped ZnO; Microstructural parameters; Optical constants; Surface morphology; ZINC-OXIDE FILMS; ANNEALING TEMPERATURE; PHOTOLUMINESCENCE; THICKNESS; CONSTANTS;
D O I
10.1016/j.mseb.2010.10.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Investigations on the effect of annealing temperature on the structural, optical properties and morphology of Al-doped ZnO thin films deposited on glass substrate by chemical bath deposition have been carried out. X-ray diffraction studies revealed that deposited films are in polycrystalline nature with hexagonal structure along the (0 0 2) crystallographic plane. Microstructural properties of films such as crystallite size, texture coefficient, stacking fault probability and microstrain were calculated from predominant (0 02) diffraction lines. The UV-Vis-NIR spectroscopy studies revealed that all the films have high optical transmittance (>60%) in the visible range. The optical band gap values are found to be in the range of 3.25-3.31 eV. Optical constants have been estimated and the values of n and k are found to increase with increase of heat treatment. The films have increased transmittance with increase of heat treatment. Al-doped ZnO thin films fabricated by this simple and economic chemical bath deposition technique without using any carrier gas are found to be good in structural and optical properties which are desirable for photovoltaic applications. Scanning electron microscopic images revealed that the hexagonal shaped grains that occupy the entire surface of the film with its near stoichiometric composition. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:152 / 156
页数:5
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