Thermoelectric Properties of Al-Doped ZnO Thin Films

被引：27
|
作者：
Saini, S. L [1 ]
Mele, P. [1 ]
Honda, H. [2 ]
Matsumoto, K. [3 ]
Miyazaki, K. [4 ]
Ichinose, A. [5 ]
机构：
[1] Hiroshima Univ, Inst Sustainable Sci & Dev, Higashihiroshima 7398530, Japan
[2] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398530, Japan
[3] Kyushu Inst Technol, Dept Mat Sci, Kitakyushu, Fukuoka 8048550, Japan
[4] Kyushu Inst Technol, Dept Mech Engn, Kitakyushu, Fukuoka 8048550, Japan
[5] CRIEPI, Elect Power Engn Res Lab, Yokosuka, Kanagawa 2400196, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 06期
关键词：
Thermoelectric; ZnO thin films; PLD; Seebeck; power factor; TEMPERATURE; SUBSTRATE; GROWTH;
D O I：
10.1007/s11664-014-2992-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T (dep) = 300-600 A degrees C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 A degrees C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 mu V/K and power factor 0.13 x 10(-3) Wm(-1) K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 x 10(-3) Wm(-1) K-2 at 600 K, surpassing the best AZO film previously reported in the literature.
引用
收藏
页码：2145 / 2150
页数：6
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