Thermoelectric Properties of Al-Doped ZnO Thin Films

被引：27
|
作者：
Saini, S. L [1 ]
Mele, P. [1 ]
Honda, H. [2 ]
Matsumoto, K. [3 ]
Miyazaki, K. [4 ]
Ichinose, A. [5 ]
机构：
[1] Hiroshima Univ, Inst Sustainable Sci & Dev, Higashihiroshima 7398530, Japan
[2] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398530, Japan
[3] Kyushu Inst Technol, Dept Mat Sci, Kitakyushu, Fukuoka 8048550, Japan
[4] Kyushu Inst Technol, Dept Mech Engn, Kitakyushu, Fukuoka 8048550, Japan
[5] CRIEPI, Elect Power Engn Res Lab, Yokosuka, Kanagawa 2400196, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2014年 / 43卷 / 06期
关键词：
Thermoelectric; ZnO thin films; PLD; Seebeck; power factor; TEMPERATURE; SUBSTRATE; GROWTH;
D O I：
10.1007/s11664-014-2992-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T (dep) = 300-600 A degrees C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 A degrees C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 mu V/K and power factor 0.13 x 10(-3) Wm(-1) K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 x 10(-3) Wm(-1) K-2 at 600 K, surpassing the best AZO film previously reported in the literature.
引用
收藏
页码：2145 / 2150
页数：6
相关论文
共 50 条
  • [31] Effects of Al Concentration on Structural and Optical Properties of Al-doped ZnO Thin Films
    Kim, Nun Su
    Yim, Kwang Gug
    Son, Jeong-Sik
    Leem, Jae-Young
    [J]. BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2012, 33 (04): : 1235 - 1241
  • [32] Thermoelectric properties optimization of Al-doped ZnO thin films prepared by reactive sputtering Zn-Al alloy target
    Fan, Ping
    Li, Ying-zhen
    Zheng, Zhuang-hao
    Lin, Qing-yun
    Luo, Jing-ting
    Liang, Guang-xing
    Zhang, Miao-qin
    Chen, Min-cong
    [J]. APPLIED SURFACE SCIENCE, 2013, 284 : 145 - 149
  • [33] Tailoring the Structural and Optoelectronic Properties of Al-Doped Nanocrystalline ZnO Thin Films
    C. Periasamy
    P. Chakrabarti
    [J]. Journal of Electronic Materials, 2011, 40 : 259 - 266
  • [34] Growth, crystal structure and optical properties of Al-doped ZnO thin films
    Kashuba, Andrii
    Ilchuk, Hryhorii
    Petrus, Roman
    Andriyevsky, Bohdan
    Bovgyra, Oleg
    Semkiv, Ihor
    Kovalenko, Mariya
    Dzikovskyi, Viktor
    [J]. MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2021, 717 (01) : 72 - 79
  • [35] Properties of Al-doped ZnO thin films deposited by a chemical spray process
    Gomez, H.
    Maldonado, A.
    Castanedo-Perez, R.
    Torres-Delgado, G.
    Olvera, M. de la L.
    [J]. MATERIALS CHARACTERIZATION, 2007, 58 (8-9) : 708 - 714
  • [36] Tailoring the Structural and Optoelectronic Properties of Al-Doped Nanocrystalline ZnO Thin Films
    Periasamy, C.
    Chakrabarti, P.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (03) : 259 - 266
  • [37] Chemical interactions of thiophene with ZnO and Al-doped ZnO thin films
    Fouts, J. A.
    Fowler, B.
    Shiller, P. J.
    Doll, G. L.
    [J]. SURFACE & COATINGS TECHNOLOGY, 2017, 314 : 55 - 66
  • [38] MICROSTRUCTURE AND THERMOELECTRIC PROPERTIES OF Al-DOPED ZnO SINTERED BODY
    Shikatani, N.
    Misawa, T.
    Kawakami, Y.
    Ohta, M.
    [J]. THERMEC 2009, PTS 1-4, 2010, 638-642 : 2172 - +
  • [39] Thermoelectric Properties of Solution Combustion Synthesized Al-Doped ZnO
    Zhang, Lihua
    Tosho, Tsuyoshi
    Okinaka, Noriyuki
    Akiyama, Tomohiro
    [J]. MATERIALS TRANSACTIONS, 2008, 49 (12) : 2868 - 2874
  • [40] Effect of Gallium Interlayer in ZnO and Al-doped ZnO Thin Films
    Bhoomanee, Chawalit
    Nilphai, Sanpet
    Sutthana, Sutthipoj
    Ruankham, Pipat
    Choopun, Supab
    Wongratanaphisan, Duangmanee
    [J]. INTEGRATED FERROELECTRICS, 2015, 165 (01) : 121 - 130
12345