Amorphous hydrogenated carbon films treated by SF6 plasma

被引:0
|
作者
Marins, N. M. S. [1 ]
Mota, R. P. [1 ]
Santos, D. C. R. [1 ]
Honda, R. Y. [1 ]
Kayama, M. E. [1 ]
Kostov, K. G. [1 ]
Algatti, M. A. [1 ]
Cruz, N. C.
Rangel, E. C.
机构
[1] UNESP, Fac Engn, Lab Plasma, BR-12516410 Guaratingueta, SP, Brazil
关键词
COATINGS; DEPOSITION; PRESSURE; DLC;
D O I
10.1088/1742-6596/167/1/012054
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work was performed to verify the chemical structure, mechanical and hydrophilic properties of amorphous hydrogenated carbon films prepared by plasma enhanced chemical vapor deposition, using acetylene/argon mixture as monomer. Films were prepared in a cylindrical quartz reactor, fed by 13.56 MHz radiofrequency. The films were grown during 5 min, for power varying from 25 to 125 W at a fixed pressure of 9.5 Pa. After deposition, all samples were treated by SF6 plasma with the aim of changing their hydrophilic character. Film chemical structure investigated by Raman spectroscopy, revealed the increase of sp(3) hybridized carbon bonds as the plasma power increases. Hardness measurements performed by the nanoindentation technique showed an improvement from 5 GPa to 14 GPa following the increase discharge power. The untreated films presented a hydrophilic character, which slightly diminished after SF6 plasma treatment.
引用
收藏
页数:4
相关论文
共 50 条
  • [31] Wet etching of hydrogenated amorphous carbon films
    Jaramillo, JM
    Mansano, RD
    Zambom, LS
    Massi, M
    Maciel, HS
    [J]. DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 976 - 979
  • [32] The adhesion of hydrogenated amorphous carbon films on silicone
    Donnelly, K
    Dowling, DP
    McConnell, ML
    Mooney, M
    [J]. THIN SOLID FILMS, 2001, 394 (1-2) : 102 - 108
  • [33] Optical characterization of amorphous hydrogenated carbon films
    Chen, JQ
    Freitas, JA
    Meeker, DL
    [J]. DIAMOND AND RELATED MATERIALS, 2000, 9 (01) : 48 - 55
  • [34] Nitrogen modification of hydrogenated amorphous carbon films
    Silva, SRP
    Robertson, J
    Amaratunga, GAJ
    Rafferty, B
    Brown, LM
    Schwan, J
    Franceschini, DF
    Mariotto, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2626 - 2634
  • [35] Incorporation of sulfur into hydrogenated amorphous carbon films
    Filik, J
    Lane, IM
    May, RW
    Pearce, SRJ
    Hallam, KR
    [J]. DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) : 1377 - 1384
  • [36] SF6 plasma etching of silicon nanocrystals
    Liptak, R. W.
    Devetter, B.
    Thomas, J. H., III
    Kortshagen, U.
    Campbell, S. A.
    [J]. NANOTECHNOLOGY, 2009, 20 (03)
  • [37] Anisotropic etching of silicon in SF6 plasma
    Knizikevicius, R
    Kopustinskas, V
    [J]. VACUUM, 2004, 77 (01) : 1 - 4
  • [38] PARTICLE DENSITIES IN A DECAYING SF6 PLASMA
    BRAND, KP
    KOPAINSKY, J
    [J]. APPLIED PHYSICS, 1978, 16 (04): : 425 - 432
  • [39] Decomposition of SF6 in an RF plasma environment
    Shih, M
    Lee, WJ
    Tsai, CH
    Tsai, PJ
    Chen, CY
    [J]. JOURNAL OF THE AIR & WASTE MANAGEMENT ASSOCIATION, 2002, 52 (11): : 1274 - 1280
  • [40] Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma
    Sreenidhi, T.
    Baskar, K.
    DasGupta, Amitava
    DasGupta, Nandita
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)