Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

被引：12

作者：

Zhang, Hongyan ^{[1
]}

Zhao, Xiaofeng ^{[2
]}

Huang, Jiahe ^{[1
]}

Bai, Ju ^{[1
]}

Hou, Yanjun ^{[1
]}

Wang, Cheng ^{[1
,3
]}

Wang, Shuhong ^{[1
]}

Bai, Xuduo ^{[1
]}

机构：

[1] Heilongjiang Univ, Sch Chem Engn & Mat, Harbin 150080, Peoples R China

[2] Heilongjiang Univ, Sch Elect Engn, Harbin 150080, Peoples R China

[3] South China Univ Technol, South China Adv Inst Soft Matter Sci & Technol, Guangzhou 510640, Peoples R China

来源：

RSC ADVANCES | 2020年 / 10卷 / 25期

基金：

黑龙江省自然科学基金; 中国国家自然科学基金;

关键词：

CARRIER TRANSPORT MECHANISMS; MULTILEVEL; PERFORMANCE; FABRICATION; COMPOSITES; NANOSHEETS; FILMS;

D O I：

10.1039/d0ra00667j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior. Herein, via a series of storage performance tests, it was proved that the ITO/PVP:ZnO/Al device has a higher ON/OFF current ratio and better memory performance than the ITO/PVP/Al device. Moreover, at 13 wt% concentration of ZnO NPs, optimal storage performance was obtained, the switch state current ratio significantly increased, and the threshold voltage obviously decreased. The conduction mechanism of the devices was further discussed. The device having inorganic nanoparticles embedded in the polymer has excellent storage performance, which has potential application value in data storage.

引用

页码：14662 / 14669

页数：8

共 50 条

[41] What is the next embedded non-volatile memory technology?
Jun, YH
Jew, T
[J]. 2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 : 306 - 306
[42] Progress in non-volatile memory devices based on nanostructured materials and nanofabrication
Lee, Jang-Sik
[J]. JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (37) : 14097 - 14112
[43] Prospect of Embedded Non-Volatile Memory in the Smart Society
Yamauchi, Tadaaki
[J]. 2015 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), 2015,
[44] Hybrid Designs for Non-Volatile Embedded Memory Cells
Wei, Wei
Lombardi, Fabrizio
Namba, Kazuteru
[J]. 2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2015, : 1206 - 1209
[45] Embedded trusted computing with authenticated non-volatile memory
Schellekens, Dries
Tuyls, Pim
Preneel, Bart
[J]. TRUSTED COMPUTING - CHALLENGES AND APPLICATIONS, PROCEEDINGS, 2008, 4968 : 60 - 74
[46] ZnO as dielectric for optically transparent non-volatile memory
Salim, N. Tjitra
Aw, K. C.
Gao, W.
Wright, Bryon E.
[J]. THIN SOLID FILMS, 2009, 518 (01) : 362 - 365
[47] Non-Volatile Resistive Memory: Technology Capable of Revolutionary Compromises
Navarro, G.
Vianello, E.
Sousa, V.
Molas, G.
Nowak, E.
De Salvo, B.
Perniola, L.
[J]. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2016, 72 (02): : 3 - 10
[48] Flexible and Stackable Non-Volatile Resistive Memory for High Integration
Ali, Shawkat
Bae, Jinho
Lee, Chong Hyun
[J]. LOW-DIMENSIONAL MATERIALS AND DEVICES, 2015, 9553
[49] Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application
Komal, Km
Gupta, Govind
Singh, Mukhtiyar
Singh, Bharti
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 923
[50] Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application
Komal, Km
Gupta, Govind
Singh, Mukhtiyar
Singh, Bharti
[J]. Journal of Alloys and Compounds, 2022, 923

← 1 2 3 4 5 →