Measurement of high electrical current density effects in solder joints

被引:24
|
作者
Ye, H [1 ]
Hopkins, DC [1 ]
Basaran, C [1 ]
机构
[1] SUNY Buffalo, UB Elect Packaging Lab, Buffalo, NY 14260 USA
关键词
D O I
10.1016/S0026-2714(03)00131-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measuring mechanical implications of high current densities in microelectronic packaging interconnects has always been a challenging goal. Due to small interconnect size this task has typically been accomplished by measuring the change in electrical resistance of the joint. This measurement parameter is global and does not give local mechanical state information. Also, understanding strain evolution in the solder over time is an important step toward developing a damage mechanics model. The real-time, full-field, strain displacement in a eutectic Sn/Pb solder joint during electrical current stressing was measured with Moire interferometry (Post et al., High sensitivity Moire, Springer, New York, 1994) under in situ conditions. A finite element model simulation for thermal stressing was performed and compared with measured strain. The initial results show that the measured strain was largely due to thermal stressing versus the current density of 1.8 x 10(2) A/cm(2). A second Moire interferometry experiment with thermal control distinguishes deformation of solder joint due to pure current stressing above 5000 A/cm(2). (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2021 / 2029
页数:9
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