Reconfigurable Characteristics of Spintronics-based MOSFETs for Nonvolatile Integrated Circuits

被引：9

作者：

Inokuchi, Tomoaki ^{[1
]}

Marukame, Takao ^{[1
]}

Tanamoto, Tetsufumi ^{[1
]}

Sugiyama, Hideyuki ^{[1
]}

Ishikawa, Mizue ^{[1
]}

Saito, Yoshiaki ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp R&D Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

来源：

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2010年

关键词：

Spin-MOSFET; spin dependent transport; spin-transfer-; torque-switching;

D O I：

10.1109/VLSIT.2010.5556194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reconfigurability of a novel spintronics-based MOSFET; "Spin-transfer-Torque-Switching MOSFET (STS-MOSFET)" was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10(5) cycles. It was clarified that the read and write characteristics (i.e., MC ratio and write voltage) can be improved by choosing connection configurations of the source and the drain in the STS-MOSFETs. Large scale circuit simulations for various circuits in FPGA revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.

引用

页码：119 / 120

页数：2

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