Temperature behaviour of strain and defects in sapphire implanted with Si+ ions

被引：1

作者：

Flynn, C. ^{[1
]}

Atanackovic, P. ^{[1
]}

Enjeti, L. ^{[1
]}

机构：

[1] Silanna Semicond, Sydney Olympic Pk, NSW 2127, Australia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 285卷

关键词：

Ion implantation; Sapphire; X-RAY; GAN EPILAYERS; SUBSTRATE; DIFFRACTION;

D O I：

10.1016/j.nimb.2012.05.004

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Strain and defects produced by implantation of Si+ ions into r-plane sapphire are studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Post-implantation annealing carried out at temperatures up to 1100 degrees C is observed to reduce strain and the number of defects. The peak value of strain falls linearly with increasing annealing temperature. Peaks in the strain depth profiles correspond to the regions of highest defect density. Roughness and amorphous content at the surface can be reduced by high temperature annealing. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：112 / 115

页数：4

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