Polarization Dynamics of a Thin Ferroelectric Film

被引：1
|
作者：
Kazantseva, E. V. [1 ,2 ]
Mishina, E. D. [1 ]
Mukhortov, V. M. [3 ]
Sigov, A. S. [1 ]
机构：
[1] Moscow State Inst Radioengn Elect & Automat, Dept Condensed Matter Phys, Moscow 119454, Russia
[2] Moscow Engn Phys Inst, Dept Solid State Phys & Nanostruct, Moscow 115409, Russia
[3] Russian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, Russia
来源：
FERROELECTRICS | 2010年 / 400卷
关键词：
SUSCEPTIBILITY TENSOR COMPONENTS; PHASE;
D O I：
10.1080/00150193.2010.505804
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nonlinear transmission of the short electromagnetic pulse results in switching of the thin ferroelectric film polarization. Estimations of the switching dynamics parameters are presented. Analysis of the model based on dynamical Landau equations to the recent experimental results allows us compare theoretical predictions and the experimental data.
引用
收藏
页码：269 / 275
页数：7
相关论文
共 50 条
  • [41] Thin Films of Vinylidene Fluoride Copolymer with Tetrafluoroethylene: Dynamics of Ferroelectric Polarization Switching
    Fedosov, S. N.
    Sergeeva, A. E.
    PHYSICS AND CHEMISTRY OF SOLID STATE, 2020, 21 (01): : 43 - 51
  • [42] Polarization switching in ferroelectric thin film induced by a single-period terahertz pulse
    Elena Mishina
    Kirill Grishunin
    Vladislav Bilyk
    Natalia Sherstyuk
    Alexander Sigov
    Vladimir Mukhortov
    Andrey Ovchinnikov
    Alexey Kimel
    MRS Advances, 2018, 3 (33) : 1901 - 1906
  • [43] The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film
    WANG LongHai1
    2 Department of Electronic Science and Technology
    3 The Research & Test Center of Materials
    Science China Technological Sciences, 2007, (02) : 190 - 198
  • [44] EFFECT OF FERROELECTRIC POLARIZATION OF INSULATED-GATE THIN-FILM TRANSISTOR PARAMETERS
    ZULEEG, R
    WIEDER, HH
    SOLID-STATE ELECTRONICS, 1966, 9 (06) : 657 - &
  • [45] Asymmetric switching of ferroelectric polarization in a heteroepitaxial BaTiO3 thin film capacitor
    Abe, K
    Yanase, N
    Kawakubo, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7A): : 4059 - 4063
  • [46] Electrically Controlled Reversible Polarization Fatigue-Recovery in Ferroelectric Thin Film Capacitors
    Kale, Somnath
    Petraru, Adrian
    Kohlstedt, Hermann
    Soni, Rohit
    ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (04) : 1692 - 1702
  • [47] The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film
    LongHai Wang
    Jun Yu
    SuLing Zhao
    ChaoDuan Zheng
    YunBo Wang
    JunXiong Gao
    Science in China Series E: Technological Sciences, 2007, 50 : 190 - 198
  • [48] The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film
    Wang, LongHai
    Yu, Jun
    Zhao, SuLing
    Zheng, ChaoDuan
    Wang, YunBo
    Gao, JunXiong
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2007, 50 (02): : 190 - 198
  • [49] Optoelectric properties of SnSe thin-film regulated using ferroelectric polarization substrate
    Song B.
    Han J.
    Hao R.
    Li J.
    Wang X.
    Harbin Gongye Daxue Xuebao/Journal of Harbin Institute of Technology, 2016, 48 (11): : 1 - 6
  • [50] Interdomain Screening Effect in Multidomain Ferroelectric Thin Film and Its Impact on Polarization Switching
    Fan, Mengqi
    Liu, Fei
    Liu, Xiaoyan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, : 6016 - 6021
12345