Reduced Graphite Oxide-Indium Tin Oxide Hybrid Materials for use as a Transparent Electrode
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作者:
Choi, Kyoung Soon
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Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South KoreaChung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
Choi, Kyoung Soon
[1
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Park, Yensil
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Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South KoreaChung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
Park, Yensil
[1
]
Kwon, Ki-Chang
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Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South KoreaChung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
Kwon, Ki-Chang
[1
]
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Kim, Jooheon
[1
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Kim, Chang Keun
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Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South KoreaChung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
Kim, Chang Keun
[1
]
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Kim, Soo Young
[1
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Hong, Kihyon
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Pohang Univ Sci & Technol, Div Adv Mat Sci, Pohang 790784, Gyeongbuk, South Korea
Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South KoreaChung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
Hong, Kihyon
[2
,3
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Lee, Jong-Lam
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Pohang Univ Sci & Technol, Div Adv Mat Sci, Pohang 790784, Gyeongbuk, South Korea
Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South KoreaChung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
Lee, Jong-Lam
[2
,3
]
机构:
[1] Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
[2] Pohang Univ Sci & Technol, Div Adv Mat Sci, Pohang 790784, Gyeongbuk, South Korea
[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
Reduced graphite oxide (rGO)-indium tin oxide (ITO) hybrid materials suitable for spin-coating transparent electrodes were synthesized and evaluated. GO was made using a modified Hummers method and was reduced by p-phenylene diamine (PPD-rGO) or hydrazine hydrate (HYD-rGO). Raman spectra showed that the G-band of PPD-rGO or HYD-rGO down-shifted from 1599 to 1583 cm(-1) and the intensity ratio of the D-band with respect to the G-band increased from 0.67 to 0.91 or 0.83, indicating the recovery of the hexagonal network of carbon atoms with defects. According to elemental analysis data, oxygen content decreased from 44.34 to 19.58 and 18.30 after GO was treated by PPD or HYD. After adding 0.66 wt % PPD-rGO or HYD-rGO into sol-gel ITO, the sheet resistance of the film decreased from 2 x 10(3) to 1.0 x 10(3) or 0.7 x 10(3) Omega/sq, respectively. Further, transmittances as high as 87% were maintained. The operating voltage at 30 mA/cm(2) in organic light emitting diodes using hybrid materials of HYD-rGO and ITO as anodes decreased from 23.8 to 14.2 V. Luminance at 90 mA/cm(2) increased from 7500 to 11000 cd/m(2). Therefore, rGO effectively reduces the sheet resistance of sol-gel ITO. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3593044] All rights reserved.
机构:
Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Jeong, Jin-A
Kim, Han-Ki
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Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Kim, Han-Ki
Koo, Hyun-Woo
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OLED Business Samsung Display, Next Generat BP Dev Team, Yongin 446711, Gyeonggi, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Koo, Hyun-Woo
Kim, Tae-Woong
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OLED Business Samsung Display, Next Generat BP Dev Team, Yongin 446711, Gyeonggi, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
机构:
Shandong Univ, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250101, Peoples R China
Han Xu
Sun Bo-Wen
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Shandong Univ, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250101, Peoples R China
Sun Bo-Wen
Xu Rui-Xue
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Shandong Univ, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250101, Peoples R China
Xu Rui-Xue
Xu Jing
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Shandong Univ, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250101, Peoples R China
Xu Jing
Hong Wang
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Shandong Univ, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250101, Peoples R China
Hong Wang
Qian Kai
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Shandong Univ, Sch Microelect, Jinan 250101, Peoples R China
Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Guangdong, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250101, Peoples R China
机构:
Myong Ji Univ, Semicond Mat Devices Lab, Dept Ceram Engn, Yongin Si 449728, Kyunggi Do, South KoreaMyong Ji Univ, Semicond Mat Devices Lab, Dept Ceram Engn, Yongin Si 449728, Kyunggi Do, South Korea
Yoo, DH
Shin, MW
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Myong Ji Univ, Semicond Mat Devices Lab, Dept Ceram Engn, Yongin Si 449728, Kyunggi Do, South KoreaMyong Ji Univ, Semicond Mat Devices Lab, Dept Ceram Engn, Yongin Si 449728, Kyunggi Do, South Korea
Shin, MW
[J].
DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2,
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449-4
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1004
机构:
Korea Univ, Dept Nanophoton, Seoul 136713, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Kim, Dae-Hyun
Lee, Han-Kyeol
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机构:
Kyung Hee Univ, Dept Appl Phys, Gyeonggi Do 446701, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Lee, Han-Kyeol
Na, Jin-Young
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机构:
Kyung Hee Univ, Dept Appl Phys, Gyeonggi Do 446701, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Na, Jin-Young
Kim, Sun-Kyung
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机构:
Kyung Hee Univ, Dept Appl Phys, Gyeonggi Do 446701, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Kim, Sun-Kyung
Yoo, Young-Zo
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机构:
Duksan HiMetal Co Ltd, Ulsan 683804, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea
Yoo, Young-Zo
Seong, Tae-Yeon
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机构:
Korea Univ, Dept Nanophoton, Seoul 136713, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nanophoton, Seoul 136713, South Korea