Pressure-induced structural transitions and electronic topological transition of Cu2Se

被引:10
|
作者
Zhang, Yuhang [1 ,2 ]
Shao, Xuecheng [1 ]
Zheng, Yanbin [1 ,3 ]
Yan, Limin [1 ]
Zhu, Pinwen [1 ]
Li, Yan [1 ]
Xu, Huailiang [2 ]
机构
[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China
[3] Changchun Univ Chinese Med, Changchun 130012, Jilin, Peoples R China
基金
中国国家自然科学基金;
关键词
Cu2Se; High-pressure; Structural transition; Electronic topological transition; THERMOELECTRIC PERFORMANCE; LATTICE-DYNAMICS; PHASE-TRANSITION; COPPER SELENIDE; X-RAY; SUPERCONDUCTIVITY; TEMPERATURE; ENHANCEMENT; DEPENDENCE; BI2TE3;
D O I
10.1016/j.jallcom.2017.10.201
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We performed high-pressure in situ angle dispersive X-ray diffraction (ADXRD) experiments combined with CALYPSO methodology and band structure calculations on Cu2Se up to 42.1 GPa at room temperature, and four phases were identified. The initial low-pressure phase is assigned to the previously proposed monoclinic structure (space group C2/c). Phase II (space group C2/m) and phase III (space group C2/m) emerged at 3.3 GPa. Moreover, a bulk metallic phase IV (space group Pca2(1)) emerged at 7.4 GPa. We find that, unexpectedly, semimetallic phase III probably experiences a pressure-induced electronic topological transition (ETT) to another semimetallic state at about 20.0-25.0 GPa. Our results show that pressure plays a dramatic role in tuning Cu2Se's crystal structures and electronic states. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:280 / 285
页数:6
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