High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

被引:79
|
作者
Fang, Cizhe [1 ]
Yang, Qiyu [1 ]
Yuan, Qingchen [2 ,3 ]
Gan, Xuetao [2 ,3 ]
Zhao, Jianlin [2 ,3 ]
Shao, Yao [4 ]
Liu, Yan [1 ]
Han, Genquan [1 ]
Hao, Yue [1 ]
机构
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Shaanxi Joint Key Lab Graphene, Xian 710071, Peoples R China
[2] Northwestern Polytech Univ, Sch Phys Sci & Technol, MOE Key Lab Mat Phys & Chem Extraordinary Condit, Xian 710129, Peoples R China
[3] Northwestern Polytech Univ, Sch Phys Sci & Technol, Shaanxi Key Lab Opt Informat Technol, Xian 710129, Peoples R China
[4] Shanghai Energy Internet Res Inst State Grid, 251 Libing Rd, Shanghai 201210, Peoples R China
基金
中国国家自然科学基金;
关键词
all-dielectric metasurface; bound states in the continuum; optical nonlinearity; topological configuration; LIGHT; SUBWAVELENGTH; HOLOGRAMS; OPTICS;
D O I
10.29026/oea.2021.200030
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.
引用
收藏
页数:10
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