An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

被引：3

作者：

Tian, Kuen-Shiuan ^{[1
]}

Chen, Jone F. ^{[1
]}

Chen, Shiang-Yu ^{[1
]}

Wu, Kuo-Ming ^{[2
]}

Lee, J. R. ^{[1
]}

Huang, Tsung-Yi ^{[2
]}

Liu, C. A. ^{[2
]}

Hsu, S. L. ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Taiwan Semicond Mfg Co, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

LDMOS; high voltage; hot carrier; reliability; gate current;

D O I：

10.1143/JJAP.47.2641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (I-g) consists mainly of the electron injection, I-g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.

引用

页码：2641 / 2644

页数：4

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