Formation of molecular-scale gold nanogap junctions via controlled electromigraition

被引：0

作者：

Esen, G ^{[1
]}

Getty, SA ^{[1
]}

Fuhrer, MS ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

Electronic Properties of Novel Nanostructures | 2005年 / 786卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used a feedback method to control the electromigration of gold nanowires to form nanogap junctions, similar to recent reports [1, 2]. We have studied gold wires fabricated with conventional electron-beam and photolithography on thick SiO2 and thin Al2O3 (over Al) substrates. We find that the role of feedback mechanism is to control the local temperature of the electromigrating nanowire, and controlled breaking of nanowires is possible only when the wire is in good thermal contact to either the substrate or the bulk metal leads.

引用

页码：534 / 537

页数：4

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