n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays

被引：23
|
作者：
Zhang, Xiao-Mei [1 ]
Golberg, Dmitri [1 ]
Bando, Yoshio [1 ]
Fukata, Naoki [1 ]
机构：
[1] Natl Inst Mat Sci, World Premier Int WPI Res Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
来源：
NANOSCALE | 2012年 / 4卷 / 03期
关键词：
SILICON; NANOWIRES;
D O I：
10.1039/c2nr11752e
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A wafer-scale, low-cost solar cell based on n-ZnO/p-Si 3D hetero-junction arrays on holey Si substrates has been fabricated. This device shows a power-conversion efficiency of 1.2% and high photosensitivity. The present n-ZnO/p-Si heterojunction architectures are envisaged as potentially valuable candidates for next-generation photovoltaics.
引用
收藏
页码：737 / 741
页数：5
相关论文
共 50 条
  • [21] Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer
    Xiong, Chao
    Xiao, Jin
    Chen, Lei
    Du, Wenhan
    Xu, Weilong
    Hou, Dongdong
    JOURNAL OF SEMICONDUCTORS, 2018, 39 (12)
  • [22] Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors
    Periasamy, C.
    Chakrabarti, P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (05):
  • [23] p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes
    Huang, Chun-Ying
    Yang, Ying-Jay
    Chen, Ju-Ying
    Wang, Chun-Hsiung
    Chen, Yang-Fang
    Hong, Lu-Sheng
    Liu, Chie-Sheng
    Wu, Chia-Yin
    APPLIED PHYSICS LETTERS, 2010, 97 (01)
  • [24] Mechanism of the photocatalytic activity of p-Si(100)/n-ZnO nanorods heterojunction
    Nguyen Thi Hoa
    Vuong Van Cuong
    Nguyen Dinh Lam
    MATERIALS CHEMISTRY AND PHYSICS, 2018, 204 : 397 - 402
  • [25] Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer
    Chao Xiong
    Jin Xiao
    Lei Chen
    Wenhan Du
    Weilong Xu
    Dongdong Hou
    Journal of Semiconductors, 2018, (12) : 137 - 140
  • [26] Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures
    Reddy, N. Koteeswara
    Ahsanulhaq, Q.
    Kim, J. H.
    Hahn, Y. B.
    APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [27] PREPARATION OF N-ZNO/P-SI HETEROJUNCTION BY SOL-GEL PROCESS
    OKAMURA, T
    SEKI, Y
    NAGAKARI, S
    OKUSHI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (6B): : L762 - L764
  • [28] Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer
    Chao Xiong
    Jin Xiao
    Lei Chen
    Wenhan Du
    Weilong Xu
    Dongdong Hou
    Journal of Semiconductors, 2018, 39 (12) : 137 - 140
  • [29] Improve the properties of n-ZnO/p-Si heterojunction by CuSCN buffer layer
    Xiong, Chao
    Chen, Lei
    Du, Wenhan
    Ma, Jinxiang
    Xiao, Jin
    Zhu, Xifang
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2017, 31 (16-19):
  • [30] Preparation of ZnO Film on p-Si and I-V Characteristics of p-Si/n-ZnO
    Mondal, Shampa
    Kanta, Kalyani Prasad
    Mitra, Partha
    MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2013, 16 (01): : 94 - 99
12345