n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays

被引：23
|
作者：
Zhang, Xiao-Mei [1 ]
Golberg, Dmitri [1 ]
Bando, Yoshio [1 ]
Fukata, Naoki [1 ]
机构：
[1] Natl Inst Mat Sci, World Premier Int WPI Res Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
来源：
NANOSCALE | 2012年 / 4卷 / 03期
关键词：
SILICON; NANOWIRES;
D O I：
10.1039/c2nr11752e
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A wafer-scale, low-cost solar cell based on n-ZnO/p-Si 3D hetero-junction arrays on holey Si substrates has been fabricated. This device shows a power-conversion efficiency of 1.2% and high photosensitivity. The present n-ZnO/p-Si heterojunction architectures are envisaged as potentially valuable candidates for next-generation photovoltaics.
引用
收藏
页码：737 / 741
页数：5
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