Electrical characteristics of Ir/Au and Pd/Ir/Au ohmic contacts on p-InGaAs

被引：4
|
作者：
Jang, JH
Kim, S
Adesida, I
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 01期
关键词：
D O I：
10.1049/el:20040058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ohmic contacts based on I-r/Au and Pd/Ir/Au metallisations have been formed on highly doped p-type InGaAs. Their electrical characteristics were measured and compared with those of conventional Ti/Pt/Au ohmic contacts. They were found to have ohmic contact resistance as low as Ti/Pt/Au metallisation but with superior thermal stabilities.
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页码：77 / 78
页数：2
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