Electrical characteristics of Ir/Au and Pd/Ir/Au ohmic contacts on p-InGaAs

被引：4
|
作者：
Jang, JH
Kim, S
Adesida, I
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 01期
关键词：
D O I：
10.1049/el:20040058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ohmic contacts based on I-r/Au and Pd/Ir/Au metallisations have been formed on highly doped p-type InGaAs. Their electrical characteristics were measured and compared with those of conventional Ti/Pt/Au ohmic contacts. They were found to have ohmic contact resistance as low as Ti/Pt/Au metallisation but with superior thermal stabilities.
引用
收藏
页码：77 / 78
页数：2
相关论文
共 50 条
  • [1] Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs
    Bengi, A.
    Jang, S. J.
    Yeo, C. I.
    Mammadov, T.
    Oezcelik, S.
    Lee, Y. T.
    [J]. SOLID-STATE ELECTRONICS, 2011, 61 (01) : 29 - 32
  • [2] Microstructural study of Ti/Pt/Au contacts to p-InGaAs
    Ivey, DG
    Ingrey, S
    Noel, JP
    Lau, WM
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 49 (01): : 66 - 73
  • [3] PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAs
    Yu, JS
    Kim, SH
    Kim, TI
    [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 175 - 178
  • [4] Microstructural study of Ti/Pt/Au contacts to p-InGaAs
    Ivey, D.G.
    Ingrey, S.
    Noel, J.-P.
    Lau, W.M.
    [J]. Materials science & engineering. B, Solid-state materials for advanced technology, 1997, B 49 (01): : 66 - 73
  • [5] Chemical and electrical characteristics of annealed Ni/Au and Ni/Ir/Au contacts on AlGaN
    Ngoepe, P. N. M.
    Meyer, W. E.
    Auret, F. D.
    Omotoso, E.
    Diale, M.
    Swart, H. C.
    Duvenhage, M. M.
    Coetsee, E.
    [J]. PHYSICA B-CONDENSED MATTER, 2016, 480 : 209 - 212
  • [6] PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAs
    Yu, JS
    Kim, SH
    Kim, TI
    [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 175 - 178
  • [7] Comparison of the Pd/Ge/Au/Ni/Au and Pd/Ge/Pd/Ti/Au ohmic contacts to N-type InGaAs
    Park, SH
    Lee, JM
    Lee, TW
    Park, MP
    Park, CS
    Kim, IH
    Kim, JY
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S427 - S431
  • [8] Comparison of Ni/Au and Pd/Au Ohmic Contacts to p-GaN
    Sasada, M.
    Sasakura, A.
    Takashima, N.
    Tokuda, H.
    Kuzuhara, M.
    [J]. 2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2017, : 96 - 97
  • [9] Ge thickness effect on the Pd/Ge/Au/Ni/Au ohmic contacts to n-InGaAs
    Kim, IH
    Park, SH
    Lee, TW
    Park, MP
    [J]. MATERIALS LETTERS, 1999, 39 (01) : 33 - 35
  • [10] The stability to ageing of Pd/Zn and Pt-based ohmic contacts to p-InGaAs/InP
    Leech, PW
    Reeves, GK
    Ressel, P
    [J]. ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS, 1998, 514 : 441 - 446
12345