PN junctions with coupling to bending deformation in composite piezoelectric semiconductor fibers

被引:40
|
作者
Yang, Guangying [1 ]
Yang, Lei [1 ]
Du, Jianke [1 ]
Wang, Ji [1 ]
Yang, Jiashi [2 ]
机构
[1] Ningbo Univ, Sch Mech Engn & Mech, Piezoelect Device Lab, Ningbo 315211, Zhejiang, Peoples R China
[2] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
基金
中国国家自然科学基金;
关键词
Piezoelectric; Semiconductor; PN junction; Bending; Piezotronic; SURFACE-WAVES; NANOWIRE; PIEZOTRONICS; NANOGENERATOR; VIBRATIONS; PROPERTY; FIELDS; CRACK;
D O I
10.1016/j.ijmecsci.2020.105421
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
We demonstrate through a theoretical analysis that a PN junction in a composite fiber consisting of a nonpiezoelectric semiconductor layer between two piezoelectric dielectric layers is electromechanically coupled to the bending deformation of the fiber. This offers new ways for constructing piezotronic device structures. A one-dimensional model based on the macroscopic theory of piezoelectric semiconductors is used in the analysis. The built-in electric potential and electric field, the bending deformation of the fiber, and other electromechanical fields near the junction are obtained. The effects of the doping level, thickness ratio of different layers, and material combination of the composite fiber are examined.
引用
收藏
页数:14
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